Some current research in femtosecond laser-induced surface ripple structures

被引：4
|
作者：
Zheng, H. Y. [1 ]
Wang, X. C. [1 ]
Zhou, W. [2 ]
机构：
[1] Singapore Inst Mfg Technol, Singapore 638075, Singapore
[2] Nanyang Technol Univ, Precis Engn & Nanotechnol Ctr, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
来源：
INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING | 2009年 / 3卷 / 1-2期
关键词：
femtosecond laser; surface morphology; ripples; InP; GaN/sapphire; laser fluence; PULSE LASER; INDIUM-PHOSPHIDE; ABLATION; SAPPHIRE; INP; MORPHOLOGY;
D O I：
10.1504/IJSURFSE.2009.024365
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
Some current research in femtosecond (fs) laser induced surface nano/micro structures on compound semiconductors is discussed in this paper. Both wavelength and sub-wavelength periodic surface structures were observed on InP and GaN/sapphire surfaces irradiated with fs laser pulses. It was found that the morphology of the periodic structure was dependent on the polarisation of the laser beam and the number of laser pulses, and the period was dependent on the incident laser fluence. Through finely adjusting laser fluence and pulse number, uniform ripples can be achieved. The mechanisms involved in the formation laser induced surface structures are also discussed.
引用
收藏
页码：114 / 124
页数：11
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