Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

被引：24
|
作者：
Sharma, Vivek [1 ]
Tracy, Clarence [1 ]
Schroder, Dieter [1 ]
Herasimenka, Stanislau [1 ]
Dauksher, William [1 ]
Bowden, Stuart [1 ]
机构：
[1] Arizona State Univ, Solar Power Lab, Dept Elect Comp & Energy Engn, Tempe, AZ 85284 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期
基金：
美国国家科学基金会;
关键词：
RECOMBINATION VELOCITIES; THERMAL-STABILITY; LAYERS;
D O I：
10.1063/1.4863829
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality surface passivation (S-eff < 5 cm/s) was achieved on polished float zone and textured p-and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (> +/- 8 x 10(12) cm(-2)) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step. (C) 2014 AIP Publishing LLC.
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页数：4
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