Silicon carbon nitride films as passivation and antireflective coatings for silicon solar cells

被引：24
|
作者：
Silva, J. A. [1 ]
Quoizola, S. [1 ,2 ]
Hernandez, E. [1 ,2 ]
Thomas, L. [1 ,2 ]
Massines, F. [1 ]
机构：
[1] Tecnosud, CNRS PROMES, Rambla Thermodynam, F-66100 Perpignan, France
[2] Univ Perpignan, F-66860 Perpignan, France
来源：
SURFACE & COATINGS TECHNOLOGY | 2014年 / 242卷
关键词：
PECVD; FTIR spectroscopy; Silicon photovoltaics; Antireflective coating; Passivation; TRANSFORM-INFRARED-SPECTROSCOPY; SURFACE PASSIVATION; THIN-FILMS;
D O I：
10.1016/j.surfcoat.2014.01.037
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new method to obtain antireflective and passivation layers for p-type silicon solar cells is presented. Hydrogenated silicon carbon nitride (Sic(x)N(y):H) films are obtained by low frequency plasma enhanced chemical vapor deposition (PECVD), using ammonia (NH3) and tetramethylsilane (TMS) as precursors; the influence of the deposition temperature and gas ratio on the film composition and properties is studied. It can be observed that the chemical composition of the film as well as its optical and passivation properties vary strongly with the gas ratio and temperature used. The optimal conditions with respect to the refractive index, the absorption coefficient and the minority carrier lifetime after rapid thermal annealing are determined. These conditions lead to an approximate stoichiometry of SiC0.6N0.8:H thin film including nearly 5 x 10(21) cm(-3) hydrogen bonds. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：157 / 163
页数：7
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