Defect passivation of multicrystalline silicon solar cells by silicon nitride coatings

被引：0
|
作者：
Lipinski, M.
Panek, P.
Kluska, S.
Zieba, P.
Szyszka, A.
Paszkiewicz, B.
机构：
[1] Polish Acad Sci, Inst Met & Mat Sci, PL-30059 Krakow, Poland
[2] AGH Univ Sci & Technol, PL-30059 Krakow, Poland
[3] Wroclaw Tech Univ, Fac Microsyst Elect & Photon, PL-50370 Wroclaw, Poland
来源：
MATERIALS SCIENCE-POLAND | 2006年 / 24卷 / 04期
关键词：
silicon nitride coating; passivation; silicon solar cell;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of the hydrogenated silicon nitride coatings (SiNx:H) formed by the plasma enhanced chemical vapour deposition on the electrical activity of interfaces of the grains of mc-Si solar cell was examined. Passivation effects were evaluated by the measurements of light-beam-induced current scan maps. It was found that the SiNx:H layer obtained under optimized conditions significantly improves local photocurrent at the grain boundaries. The electrical parameters of mc-Si solar cells with and without the SiNx:H layers were compared.
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页数：5
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