Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

被引：24

作者：

Sharma, Vivek ^{[1
]}

Tracy, Clarence ^{[1
]}

Schroder, Dieter ^{[1
]}

Herasimenka, Stanislau ^{[1
]}

Dauksher, William ^{[1
]}

Bowden, Stuart ^{[1
]}

机构：

[1] Arizona State Univ, Solar Power Lab, Dept Elect Comp & Energy Engn, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

基金：

美国国家科学基金会;

关键词：

RECOMBINATION VELOCITIES; THERMAL-STABILITY; LAYERS;

D O I：

10.1063/1.4863829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality surface passivation (S-eff < 5 cm/s) was achieved on polished float zone and textured p-and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (> +/- 8 x 10(12) cm(-2)) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step. (C) 2014 AIP Publishing LLC.

引用

页数：4

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