Using thin emitters to control BVce0 effects in punch-through diodes for ESD protection

被引：2

作者：

van Dalen, R

Hurkx, GAM

't Zandt, MAAI

Hijzen, EA

Weijs, PJW

den Dekker, A

机构：

[1] Philips Res Leuven, B-3001 Louvain, Belgium

[2] Philips Semicond, BL RF Modules, NL-6534 AE Nijmegen, Netherlands

来源：

JOURNAL OF ELECTROSTATICS | 2002年 / 56卷 / 03期

关键词：

punch through diode; bipolar; snap back prevention; ESD protection;

D O I：

10.1016/S0304-3886(02)00055-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results of a novel punch-through diode structure which uses a thin SiGe emitter to effectively suppress impact-ionisation-related (BVce0) effects that typically start to dominate the electrical characteristics of conventional punch-through devices at voltages above 2.5-3.0 V, resulting in the occurrence of negative resistances (snap-back) and severely limiting the application range. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

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页码：311 / 329

页数：19

共 9 条

[1] Punch-through diodes as replacement for low-voltage Zener diodes in ESD protection circuits
van Dalen, R
Koops, GEJ
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JOURNAL OF ELECTROSTATICS, 2004, 61 (3-4) : 149 - 169
[2] DIFFUSED JUNCTION EFFECTS IN PUNCH-THROUGH DIODES
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[9] On-Chip Gate Electrostatic Discharge Protection Design for 900 V Power Metal Oxide Semiconductor Field Effect Transistor Using Punch-Through Diode Without Degrading Switching Loss
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