Punch-through diodes as replacement for low-voltage Zener diodes in ESD protection circuits

被引：9
|
作者：
van Dalen, R
Koops, GEJ
Pfennigstorf, O
机构：
[1] Philips Res Labs, B-3001 Louvain, Belgium
[2] Philips Semicond, D-22529 Hamburg, Germany
来源：
JOURNAL OF ELECTROSTATICS | 2004年 / 61卷 / 3-4期
关键词：
punch through diode; ESD protection; zener diode; electrostatic discharge;
D O I：
10.1016/j.elstat.2004.02.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present results on a novel punch-through diode structure that provides good clamping characteristics for both positive and negative polarity. Its performance as off-chip ESD protection device is compared to that of a conventional Zener diode with a comparable capacitance; showing that a punch-through diode features better clamping characteristics and higher current handling at a given reverse stand-off voltage. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：149 / 169
页数：21
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