Spatial analysis of dislocation distribution as a means of assessing crystal growth processes

Statistical methods were used to evaluate quantitatively the distribution of etch pits on semiconductor wafers. Comparison with Poisson distribution and the form of the radial autocorrelation function allowed the tendency to dislocation clustering (polygonisation) to be evaluated. Samples of CdTe grown by the Bridgman method were compared with those grown by three vapour methods; the former exhibits the stronger dislocation clustering.