Dislocation processes during SiC bulk crystal growth

被引：20

作者：

Ohtani, N ^{[1
]}

Katsuno, M ^{[1
]}

Tsuge, H ^{[1
]}

Fujimoto, T ^{[1
]}

Nakabayashi, M ^{[1
]}

Yashiro, H ^{[1
]}

Sawamura, M ^{[1
]}

Aigo, T ^{[1
]}

Hoshino, T ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Futtsu, Chiba 2938511, Japan

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 01期

关键词：

silicon carbide; growth from vapor; dislocations; polytype;

D O I：

10.1016/j.mee.2005.10.048

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dislocation processes during physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals were investigated by defect selective etching. It was found that foreign polytype inclusions introduced a high density of dislocations at the polytype boundary. In the polytype-transformed areas of the crystal, very few medium size hexagonal etch pits due to threading screw dislocations were observed, indicating that the polytype transformation ceased the propagation of threading screw dislocations. The oval-shaped etch pit arrays observed on the etched vicinal (0001)Si surface, indicative of the dislocation multiplication in the basal plane, showed characteristic distribution around micropipes. Based on the results, we have argued the dislocation behavior in PVT grown SiC crystals, suggesting that dislocation interaction and conversion are relevant processes to understanding the behavior. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：142 / 145

页数：4

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