Crystal growth of bulk SiC

被引：0
|
作者：
Tairov, YM
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The problems of growing SIC ingots with the LETI method are considered. An analysis of factors which are influenced by conditions and which are necessary to grow different polytype crystals is reported. The problems of crystal doping and structural quality are discussed.
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页码：11 / 15
页数：5
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