Spatial analysis of dislocation distribution as a means of assessing crystal growth processes

被引：0

作者：

Walker, EM

Buckley, DJ

Boyall, NM

Durose, K

Grasza, K

Szczerbakow, A

Palosz, W

机构：

[1] Univ Durham, Dept Phys, Durham DH1 3LE, England

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] USRA, George C Marshall Space Flight Ctr, Huntsville, AL USA

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 | 2001年 / 169期

关键词：

D O I：

暂无

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Statistical methods were used to evaluate quantitatively the distribution of etch pits on semiconductor wafers. Comparison with Poisson distribution and the form of the radial autocorrelation function allowed the tendency to dislocation clustering (polygonisation) to be evaluated. Samples of CdTe grown by the Bridgman method were compared with those grown by three vapour methods; the former exhibits the stronger dislocation clustering.

引用

页码：215 / 218

页数：4

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