Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance

被引：4
|
作者：
Lin, D. Y. [1 ]
Lin, W. C. [1 ]
Wu, F. L. [1 ]
Wu, J. S. [1 ]
Pan, Y. T. [2 ]
Lee, S. L. [2 ]
Huang, Y. S. [2 ]
机构：
[1] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 500, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 05期
关键词：
LASER STRUCTURES; DIFFUSION;
D O I：
10.1002/pssa.200881401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present the investigations of interdiffusion in InGaAsP multiple-quantum-well (MQW) structures using photoreflectance (PR) and photoluminescence (PL) measurements. It is found that the degree of compositional intermixing induced by the processes of ion implantation and rapid thermal annealing in MQW structures can be obtained through the energy shift of the 11H excitonic transition. Besides, the strain relaxation resulting from intermixing is studied through the high order excitonic transitions observed in PR spectra. It is found that the splitting energy between the 11H and 11L transitions decreases as a result of increasing the degree of intermixing. Based oil the theoretical calculation considering the strain effect and the different diffusion ratios between the group-III and group-V atoms, the data analysis have been done. It is pointed out that the diffusion coefficients and the ratio of diffusion rates between the group-V and group-III atoms has been enhanced by the P+ ion implantation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：791 / 795
页数：5
相关论文
共 50 条
  • [41] SELECTIVE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF INGAASP/INP LAYERS WITH BANDGAP ENERGY CONTROL IN INGAAS/INGAASP MULTIPLE-QUANTUM-WELL STRUCTURES
    SASAKI, T
    KITAMURA, M
    MITO, I
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) : 435 - 443
  • [42] Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers
    Hamp, MJ
    Cassidy, DT
    Robinson, BJ
    Zhao, QC
    Thompson, DA
    Davies, M
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (10) : 1380 - 1382
  • [43] Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure
    Güçlü, AD
    Rejeb, C
    Maciejko, R
    Morris, D
    Champagne, A
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) : 3391 - 3397
  • [44] A COMPREHENSIVE STUDY OF PHOTOLUMINESCENCE IN GAAS ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES
    KAMATH, KK
    VAYA, PR
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1994, 32 (03) : 231 - 237
  • [45] Polariton local states in periodic Bragg multiple-quantum-well structures
    Deych, LI
    Yamilov, A
    Lisyansky, AA
    OPTICS LETTERS, 2000, 25 (23) : 1705 - 1707
  • [46] FAR-INFRARED INVESTIGATIONS OF BAND NON-PARABOLICITIES IN HIGHLY DOPED MULTIPLE-QUANTUM-WELL STRUCTURES
    KANG, SK
    DUMELOW, T
    BRYANT, JP
    PARKER, TJ
    HARRIS, JJ
    FOXON, CT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (10) : 1323 - 1328
  • [47] Carrier transport in multiple quantum well region of InGaAsP/InP structures
    Marcinkevicius, S
    Tessler, N
    Olin, U
    Silfvenius, C
    Stalnacke, B
    Landgren, G
    ULTRAFAST PROCESSES IN SPECTROSCOPY, 1996, : 229 - 232
  • [48] Fermi-edge polaritons in Bragg multiple-quantum-well structures
    Averkiev, N. S.
    Glazov, M. M.
    Voronov, M. M.
    SOLID STATE COMMUNICATIONS, 2012, 152 (05) : 395 - 398
  • [49] Deep ultraviolet lasing from AlGaN multiple-quantum-well structures
    Yan, Jianchang
    Tian, Yingdong
    Chen, Xiang
    Zhang, Yun
    Wang, Junxi
    Li, Jinmin
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6, 2016, 13 (5-6): : 228 - 231
  • [50] Interwell carrier transport in InGaAsP multiple quantum well laser structures
    Frojdh, K
    Marcinkevicius, S
    Olin, U
    Silfvenius, C
    Stalnacke, B
    Landgren, G
    APPLIED PHYSICS LETTERS, 1996, 69 (24) : 3695 - 3697
12345