Deep ultraviolet lasing from AlGaN multiple-quantum-well structures

被引：10
|
作者：
Yan, Jianchang [1 ]
Tian, Yingdong [1 ]
Chen, Xiang [1 ]
Zhang, Yun [1 ]
Wang, Junxi [1 ]
Li, Jinmin [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing Engn Res Ctr Generat Semicond Mat & Appli, Semicond Lighting R&D Ctr,State Key Lab Solid Sta, Beijing 100083, Peoples R China
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6 | 2016年 / 13卷 / 5-6期
关键词：
AlGaN; deep ultraviolet lasing; MOCVD; optically pumping; SAPPHIRE; FILMS;
D O I：
10.1002/pssc.201510192
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report our research work on AlGaN/Al(Ga)N multiple-quantum-well (MQW) DUV laser structures. Two types of MQW structures, that is, AlxGa1-xN/AlyGa1-yN MQW (Sample A) and AlzGa1-zN/AlN MQW (Sample B), were grown on sapphire substrates by Metal-organic chemical vapour deposition. Optically pumped lasing at room temperature has been achieved from both structures. For Sample A, the main lasing emission wavelength is 288 nm along with some parasitic longer wavelength peaks. Numerical simulation results indicate that the optical confinement factor in Sample A is very low, less than 0.5%. This resulted in the high lasing threshold and short lasing lifetime of Sample A. The optical confinement factor of Sample B is greatly increased to more than 10%. This effectively improved the lasing performance of Sample B. Its lasing threshold is estimated to be 523 kW/cm(2) and the lasing spectra peaked at around 281 nm. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：228 / 231
页数：4
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