A COMPREHENSIVE STUDY OF PHOTOLUMINESCENCE IN GAAS ALGAAS MULTIPLE-QUANTUM-WELL STRUCTURES

Low excitation photoluminescence (PL) is very useful in analyzing the quantum well (QW) structures in terms of the quality of the interface, effects of doping and estimation of the effective well thickness. Here, we present various aspects of the PL study of both the undoped and doped QW structures. The PL spectra were obtained at various temperatures and at different excitation levels. The intrinsic and extrinsic emission peaks were identified and the analysis was done based on the intensity and HWHM measurements. The method of statistical lineshape fitting was used for this purpose. The effects of temperature and excitation level on the emission spectra were studied and it is also shown how these results are useful in understanding the properties of the QW structures.