Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells

被引：0
|
作者：
Chern, Grace D. [1 ]
Shen, Hongen [1 ]
Wraback, Michael [1 ]
Koblmueller, Gregor [2 ]
Gallinat, Chad S. [2 ]
Speck, James S. [2 ]
机构：
[1] USA, Sensors & Electron Devices Directorate, Res Lab, 2800 Powder Mill Rd, Adelphi, MD 20783 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the excitation wavelength dependence of terahertz emission from N-face InN/InGaN multiple quantum wells relative to that from bulk N-face InN when excited by ferntosecond optical pulses tunable from 800 nm to 1700 rim. (C)2007 Optical Society of Anierica
引用
收藏
页码：1273 / +
页数：2
相关论文
共 50 条
  • [41] COHERENT TERAHERTZ EMISSION FROM COUPLED QUANTUM-WELLS WITH EXCITON EFFECTS
    CHANSUNGSAN, C
    TSANG, L
    CHUANG, SL
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1994, 11 (12) : 2508 - 2518
  • [42] Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
    Vasilyev, Yu B.
    Mikhailov, N. N.
    Vasilyeva, G. Yu
    Ivanov, Yu L.
    Zakhar'in, A. O.
    Andrianov, A. V.
    Vorobiev, L. E.
    Firsov, D. A.
    Grigoriev, M. N.
    Antonov, A. V.
    Ikonnikov, A. V.
    Gavrilenko, V. I.
    SEMICONDUCTORS, 2016, 50 (07) : 915 - 919
  • [43] Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
    Yu. B. Vasilyev
    N. N. Mikhailov
    G. Yu. Vasilyeva
    Yu. L. Ivánov
    A. O. Zakhar’in
    A. V. Andrianov
    L. E. Vorobiev
    D. A. Firsov
    M. N. Grigoriev
    A. V. Antonov
    A. V. Ikonnikov
    V. I. Gavrilenko
    Semiconductors, 2016, 50 : 915 - 919
  • [44] Magneto-optical Terahertz emission from plasmons in parabolic quantum wells
    Zobl, R
    Unterrainer, K
    Strasser, G
    Gornik, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (04) : 315 - 321
  • [45] Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells
    Peng, LH
    Shih, CW
    Lai, CM
    Chuo, CC
    Chyi, JI
    APPLIED PHYSICS LETTERS, 2003, 82 (24) : 4268 - 4270
  • [46] Towards understanding the emission efficiency of nitride quantum wells
    Hangleiter, A
    Fuhrmann, D
    Grewe, M
    Hitzel, F
    Klewer, G
    Lahmann, S
    Netzel, C
    Riedel, N
    Rossow, U
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12): : 2808 - 2813
  • [47] Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
    Cho, HK
    Lee, JY
    Sharma, N
    Humphreys, CJ
    Yang, GM
    Kim, CS
    Song, JH
    Yu, PW
    APPLIED PHYSICS LETTERS, 2001, 79 (16) : 2594 - 2596
  • [48] Visible emission from ZnCdO/ZnO multiple quantum wells
    Lange, Martin
    Dietrich, Christof P.
    Brachwitz, Kerstin
    Stoelzel, Marko
    Lorenz, Michael
    Grundmann, Marius
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (01): : 31 - 33
  • [49] Effect of indium segregation on optical and structural properties of GaInNAs/GaAs quantum wells at emission wavelength of 1.3 μm
    Liu, H. F.
    Dixit, V.
    Xiang, N.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)
  • [50] Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound
    A. E. Zhukov
    A. R. Kovsh
    E. S. Semenova
    V. M. Ustinov
    L. Wei
    J. -S. Wang
    J. Y. Chi
    Semiconductors, 2002, 36 : 899 - 902
12345