Excitation Wavelength Dependence of Terahertz Emission from Indium Nitride Multiple Quantum Wells

被引：0
|
作者：
Chern, Grace D. [1 ]
Shen, Hongen [1 ]
Wraback, Michael [1 ]
Koblmueller, Gregor [2 ]
Gallinat, Chad S. [2 ]
Speck, James S. [2 ]
机构：
[1] USA, Sensors & Electron Devices Directorate, Res Lab, 2800 Powder Mill Rd, Adelphi, MD 20783 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the excitation wavelength dependence of terahertz emission from N-face InN/InGaN multiple quantum wells relative to that from bulk N-face InN when excited by ferntosecond optical pulses tunable from 800 nm to 1700 rim. (C)2007 Optical Society of Anierica
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页码：1273 / +
页数：2
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