Towards understanding the emission efficiency of nitride quantum wells

被引：80
|
作者：
Hangleiter, A [1 ]
Fuhrmann, D [1 ]
Grewe, M [1 ]
Hitzel, F [1 ]
Klewer, G [1 ]
Lahmann, S [1 ]
Netzel, C [1 ]
Riedel, N [1 ]
Rossow, U [1 ]
机构：
[1] Tech Univ Braunschweig, Phys Tech Inst, D-38106 Braunschweig, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期
关键词：
D O I：
10.1002/pssa.200405051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The high quantum efficiency of light emission from GaInN/GaN quantum wells despite the typically large defect density still lacks a quantitative explanation. From a detailed analysis of the efficiency of highly efficient samples we find that a reduction of the radiative probability due to free exciton dissociation is the dominant mechanism limiting the quantum efficiency. Random exciton localization is shown to be only a minor contribution.
引用
收藏
页码：2808 / 2813
页数：6
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