Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells

被引：9
|
作者：
Kim, T. [1 ]
Liu, B. [1 ]
Smith, R. [1 ]
Athanasiou, M. [1 ]
Gong, Y. [1 ]
Wang, T. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 16期
基金：
英国工程与自然科学研究理事会;
关键词：
LIGHT-EMITTING-DIODES; SPONTANEOUS-EMISSION; PHOTONIC CRYSTALS; MICROCAVITIES; LASERS;
D O I：
10.1063/1.4873161
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A "coherent" nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the "coherent" nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the "green gap" in solid-state lighting. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Ultrafast carrier relaxation in group III-nitride multiple quantum wells
    Özgür, Ü
    Everitt, HO
    Keller, S
    DenBaars, SP
    He, L
    Morkoç, H
    [J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, 2004, 5352 : 158 - 168
  • [2] Effect of localized states on internal quantum efficiency of III-nitride LEDs
    Karpov, Sergey Yu.
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (11): : 320 - 322
  • [3] Growth and characterization of III-nitride based multiple quantum wells for photovoltaic devices
    Wadekar, P. V.
    Huang, H. C.
    Chang, C. W.
    Dung, T. W.
    Lin, Y. T.
    Chen, Q. Y.
    Chou, M. C.
    Feng, S. W.
    Tu, L. W.
    Hu, N. J.
    Wijesundera, D.
    Chu, W. K.
    [J]. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 1937 - 1939
  • [4] Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells
    Zeng, KC
    Smith, M
    Lin, JY
    Jiang, HX
    Salvador, A
    Popovici, G
    Tang, H
    Kim, W
    Morkoc, H
    Khan, MA
    [J]. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 235 - 238
  • [5] Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells
    Zeng, KC
    Smith, M
    Lin, JY
    Jiang, HX
    Salvador, A
    Popovici, G
    Tang, H
    Kim, W
    Morkoc, H
    Khan, MA
    [J]. COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 235 - 238
  • [6] Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells
    Mikhail V. Kisin
    Hussein S. El-Ghoroury
    [J]. Journal of Computational Electronics, 2015, 14 : 432 - 443
  • [7] Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells
    Kisin, Mikhail V.
    El-Ghoroury, Hussein S.
    [J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2015, 14 (02) : 432 - 443
  • [8] Modeling of color-coded III-nitride LED structures with deep quantum wells
    Kisin, Mikhail V.
    El-Ghoroury, Hussein S.
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2014, 46 (10) : 1209 - 1215
  • [9] Modeling of color-coded III-nitride LED structures with deep quantum wells
    Mikhail V. Kisin
    Hussein S. El-Ghoroury
    [J]. Optical and Quantum Electronics, 2014, 46 : 1209 - 1215
  • [10] Strain states in semipolar III-nitride semiconductor quantum wells
    Funato, M.
    Inoue, D.
    Ueda, M.
    Kawakami, Y.
    Narukawa, Y.
    Mukai, T.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)
12345