Modeling of color-coded III-nitride LED structures with deep quantum wells

被引：6
|
作者：
Kisin, Mikhail V. [1 ]
El-Ghoroury, Hussein S. [1 ]
机构：
[1] Ostendo Technol Inc, Carlsbad, CA 92011 USA
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2014年 / 46卷 / 10期
关键词：
LED; MQW; Color-coded structure; Inhomogeneous injection; Auger recombination;
D O I：
10.1007/s11082-013-9820-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present, to the best of our knowledge, the first successful simulation of color-coded III-nitride light-emitting diodes (LEDs) incorporating in their active regions shallow and deep InGaN quantum wells (QWs). Dichromatic violet-aquamarine semipolar LEDs grown in Ga-polar and N-polar crystallographic orientations (Kawaguchi et al. in Appl Phys Lett 100:231110-231114, 2012) were used as an experimental benchmark. Opposite interface polarization charges in Ga-polar and N-polar LEDs provide different conditions for carrier transport and account for different shape of color-coded emission spectra. To reproduce experimentally observed trends, several effects specific for deep III-nitride QWs were essential in our modeling including strongly non-equilibrium character of active QW populations, dynamic carrier overshoot of narrow QW layers, and Auger-assisted QW depopulation.
引用
收藏
页码：1209 / 1215
页数：7
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