Effect of localized states on internal quantum efficiency of III-nitride LEDs

被引：34
|
作者：
Karpov, Sergey Yu. [1 ]
机构：
[1] STR Grp Soft Impact Ltd, St Petersburg 194156, Russia
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 11期
关键词：
III-V semiconductors; LED; internal quantum efficiency; electronic properties; device modeling;
D O I：
10.1002/pssr.201004325
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model is suggested accounting for effects of localized electron and hole states formed by composition fluctuations in the InGaN active region of a III-nitride LED on non-radiative carrier recombination at threading dislocations. The model enables explanation of the abnormal temperature dependence of internal quantum efficiency (IQE) of a green LED structure recently observed at low current densities. The theoretical predictions are in quantitative agreement with experiment in the temperature range between 200 K and 453 K. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：320 / 322
页数：3
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