On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky Barrier Diodes

被引：0
|
作者：
Jayavel, P
Santhakumar, K
Ogura, M
机构：
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan
[3] Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
来源：
COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage, Capacitance - voltage and Deep level transient spectroscopic (DLTS) studies have been carried out on the high energy carbon ions irradiated (1x10(11) and 1x10(12)) Au/n-GaAs SBDs. The barrier height of the irradiated diodes is decreased whereas the ideality factor is increased due to irradiation-induced defects. After the irradiation, the carrier concentration of the diodes decreases due to irradiation induced defects trapping of free electrons in the depletion region. An electronic energy level EL3 has been observed for both un-irradiated and irradiated diodes. The defect level is due to carbon related complex defect associated with arsenic vacancy.
引用
下载
收藏
页码：75 / 80
页数：6
相关论文
共 50 条
  • [31] Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities
    Tan, S. O.
    Tecimer, H. Uslu
    Cicek, O.
    Tecimer, H.
    Orak, I.
    Altindal, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (08) : 8340 - 8347
  • [32] On the enhancement of effective barrier height in Ti/n-GaAs Schottky barrier diodes
    Arulkumaran, S
    Arokiaraj, J
    Dharmarasu, N
    Kumar, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 119 (04): : 519 - 522
  • [33] High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition
    Chen, C.-P.
    Chang, Y.A.
    Huang, J.-W.
    Kuech, T.F.
    1600, American Inst of Physics, Woodbury, NY, USA (64):
  • [34] Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots
    Hastas, NA
    Tassis, DH
    Dimitriadis, CA
    Dozsa, L
    Franchi, S
    Frigeri, P
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 461 - 467
  • [35] The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode
    Kirsoy, A.
    Ahmetoglu , M.
    Asimov, A.
    Kucur, B.
    ACTA PHYSICA POLONICA A, 2015, 128 (2B) : B170 - B173
  • [36] The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes
    Biber, M
    Çakar, M
    Türüt, A
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (10) : 575 - 579
  • [37] The Cu/n-GaAs schottky barrier diodes prepared by anodization process
    Mehmet Biber
    Abdulmecit Türüt
    Journal of Electronic Materials, 2002, 31 : 1362 - 1368
  • [38] The Cu/n-GaAs Schottky barrier diodes prepared by anodization process
    Biber, M
    Türüt, A
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (12) : 1362 - 1368
  • [39] EFFECTS OF HYDROGEN ON THE SCHOTTKY-BARRIER OF TI/N-GAAS DIODES
    JIN, SX
    WANG, LP
    YUAN, MH
    CHEN, JJ
    JIA, YQ
    QIN, GG
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 536 - 538
  • [40] The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes
    M. Biber
    M. Çakar
    A. Türüt
    Journal of Materials Science: Materials in Electronics, 2001, 12 : 575 - 579
12345