The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes

被引：49
|
作者：
Biber, M [1 ]
Çakar, M [1 ]
Türüt, A [1 ]
机构：
[1] Ataturk Univ, Fac Sci & Arts, Dept Phys, TR-25240 Erzurum, Turkey
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2001年 / 12卷 / 10期
关键词：
D O I：
10.1023/A:1012441619984
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The anodically treated and untreated (control sample) Au/-Cu/n-GaAs Schottky diodes have been prepared. The anodic oxidization process has been made on the n-GaAs substrate in aqueous 4C(2)H(6)O(2)+2H(2)O+0.1H(3)PO(4) electrolyte with pH=2.02. The anodic treatment has increased the barrier heights. We have obtained the laterally homogeneous barrier heights of approximately 0.79 and 0.91 eV for the anodically untreated and treated Au/n-GaAs SBDs, respectively, and 0.67 and 0.91 eV for the Cu/n-GaAs SBD eV respectively when accounting for the image-forge effect only. Thus, the barrier height has been increased by at least 110 and 240 meV for Au/n-GaAs and Cu/n-GaAs SBDs, respectively. (C) 2001 Kluwer Academic Publishers.
引用
收藏
页码：575 / 579
页数：5
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