On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky Barrier Diodes

被引：0
|
作者：
Jayavel, P
Santhakumar, K
Ogura, M
机构：
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan
[3] Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
来源：
COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage, Capacitance - voltage and Deep level transient spectroscopic (DLTS) studies have been carried out on the high energy carbon ions irradiated (1x10(11) and 1x10(12)) Au/n-GaAs SBDs. The barrier height of the irradiated diodes is decreased whereas the ideality factor is increased due to irradiation-induced defects. After the irradiation, the carrier concentration of the diodes decreases due to irradiation induced defects trapping of free electrons in the depletion region. An electronic energy level EL3 has been observed for both un-irradiated and irradiated diodes. The defect level is due to carbon related complex defect associated with arsenic vacancy.
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页码：75 / 80
页数：6
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