Radiation damage in proton-irradiated strained Si n-MOSFETs

被引：4
|
作者：
Hayama, K. [1 ]
Takakura, K. [1 ]
Ohtani, T. [1 ]
Kudou, T. [1 ]
Ohyama, H. [1 ]
Mercha, A. [2 ]
Simoen, E. [2 ]
Claeys, C. [2 ,3 ]
机构：
[1] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan
[2] IMEC, B-3001 Leuven, Belgium
[3] Katholieke Univ Leuven, EE Dept, Louvain, Belgium
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2008年 / 11卷 / 5-6期
关键词：
Strained Si; MOSFETs; Radiation damage; Proton irradiation;
D O I：
10.1016/j.mssp.2008.09.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Strained Si layers (sSi) on strain-relaxed SiGe buffer layers are frequently used in order to boost up the carrier mobility. This study investigates the degradation of such sSi n-MOSFETs by 20-MeV proton irradiation. The drain current decreases and a negative shift of the threshold voltage is observed after proton irradiation. The impact of the fabrication process of sSi transistors on the degradation is also discussed. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：314 / 318
页数：5
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