Transconductance enhancement in deep submicron strained-Si n-MOSFETs

被引：108
|
作者：
Rim, K [1 ]
Hoyt, JL [1 ]
Gibbons, JF [1 ]
机构：
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源：
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年
关键词：
D O I：
10.1109/IEDM.1998.746455
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first measurements on deep submicron strained-Si n-MOSFETs. In spite of the high channel doping and vertical effective fields, electron mobility is enhanced by similar to 75% compared to typical MOSFET mobilities. The extrinsic transconductance is increased by similar to 45% for channel lengths of 0.1 mu m, when AC measurements are used to reduce self-heating effects. The improved transconductance demonstrates the use of strain-induced enhancements in both mobility and high-field transport to increase the average electron velocity, while maintaining the channel doping required to suppress short channel effects.
引用
收藏
页码：707 / 710
页数：4
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