Transconductance enhancement in deep submicron strained-Si n-MOSFETs

被引：108
|
作者：
Rim, K [1 ]
Hoyt, JL [1 ]
Gibbons, JF [1 ]
机构：
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源：
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年
关键词：
D O I：
10.1109/IEDM.1998.746455
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first measurements on deep submicron strained-Si n-MOSFETs. In spite of the high channel doping and vertical effective fields, electron mobility is enhanced by similar to 75% compared to typical MOSFET mobilities. The extrinsic transconductance is increased by similar to 45% for channel lengths of 0.1 mu m, when AC measurements are used to reduce self-heating effects. The improved transconductance demonstrates the use of strain-induced enhancements in both mobility and high-field transport to increase the average electron velocity, while maintaining the channel doping required to suppress short channel effects.
引用
收藏
页码：707 / 710
页数：4
相关论文
共 50 条
  • [21] Ballistic Transport in SiGe and Strained-Si MOSFETs
    G. Curatola
    G. Iannaccone
    Journal of Computational Electronics, 2003, 2 : 309 - 312
  • [22] Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs
    Roldán, JB
    Gámiz, F
    SOLID-STATE ELECTRONICS, 2004, 48 (08) : 1347 - 1355
  • [23] Radiation damage in proton-irradiated strained Si n-MOSFETs
    Hayama, K.
    Takakura, K.
    Ohtani, T.
    Kudou, T.
    Ohyama, H.
    Mercha, A.
    Simoen, E.
    Claeys, C.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2008, 11 (5-6) : 314 - 318
  • [24] Radiation damage in electron-irradiated strained Si n-MOSFETs
    Takakura, K.
    Ohyama, H.
    Hayama, K.
    Aoki, Y.
    Eneman, G.
    Verheyen, P.
    Simoen, E.
    Loo, R.
    Claeys, C.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) : 732 - 736
  • [25] Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs
    Watling, J. R.
    Yang, L.
    Borici, M.
    Barker, J. R.
    Asenov, A.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) : 475 - 479
  • [26] Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs
    J.R. Watling
    L. Yang
    M. Boriçi
    J.R. Barker
    A. Asenov
    Journal of Computational Electronics, 2003, 2 : 475 - 479
  • [27] Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si n-channel MOSFETs
    Xia, GR
    Nayfeh, HM
    Lee, ML
    Fitzgerald, EA
    Antoniadis, DA
    Anjum, DH
    Li, J
    Hull, R
    Klymko, N
    Hoyt, JL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) : 2136 - 2144
  • [28] Improved Analog Performance of Strained Si n-MOSFETs on Thin SiGe Strained Relaxed Buffers
    Alatise, O. M.
    Kwa, K. S. K.
    Olsen, S. H.
    O'Neill, A. G.
    ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, : 99 - 102
  • [29] SATURATION TRANSCONDUCTANCE OF DEEP-SUBMICRON-CHANNEL MOSFETS
    TAUR, Y
    HSU, CH
    WU, B
    KIEHL, R
    DAVARI, B
    SHAHIDI, G
    SOLID-STATE ELECTRONICS, 1993, 36 (08) : 1085 - 1087
  • [30] HfO2 for strained-Si and strained-SiGe MOSFETs
    Yousif, MYA
    Johansson, M
    Lundgren, P
    Bengtsson, S
    Sundqvist, J
    Hårsta, A
    Radamson, HH
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 255 - 258
12345