Electron mobility modeling in strained-Si n-MOSFETs using TCAD

被引：0
|
作者：
Dash, Tara Prasanna [1 ]
Das, Sanghamitra [1 ]
Pradhan, Diana [2 ]
Nanda, Rajib K. [1 ]
机构：
[1] Siksha O Anusandhan Univ, Dept Elect & Commun Engn, Bhubaneswar 751030, Odisha, India
[2] Natl Inst Technol, Dept Phys & Astron, Rourkela 769008, Odisha, India
来源：
2016 IEEE ANNUAL INDIA CONFERENCE (INDICON) | 2016年
关键词：
Strained Si; transconductance; TCAD tool;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
To continue with the trend of Moore's law, the use of conventional Si-MOSFETs can be replaced with high mobility channel MOSFETs. Among the high mobility channels, strained-Si channel MOSFETs have gained interest as they provide both hole and electron mobility enhancement which leads to higher performance of MOSFETs with downscaling. In this paper the electron mobility in strained Si channel has been modelled analytically and simulated for a long channel device using TCAD tool. The simulation results are verified with the experimental data available in literature. Moreover, the same model has been implemented for a short channel device to investigate the device characteristics. The experimentally reported mobility improvement factor is found to be consistent with the simulation results obtained for both short channel and long channel devices. Furthermore, improvement of overall device characteristics have been reported compared to conventional bulk Si devices.
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页数：4
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