Thermal Performance of CoolCube™ Monolithic and TSV-based 3D Integration Processes

被引：0

作者：

Santos, C. ^{[1
,2
]}

Vivet, P. ^{[1
,2
]}

Thuries, S. ^{[1
,2
]}

Billoint, O. ^{[1
,2
]}

Colonna, J. -P. ^{[1
,2
]}

Coudrain, P. ^{[3
]}

Wang, L. ^{[4
]}

机构：

[1] Univ Grenoble Alpes, F-38000 Grenoble, France

[2] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[3] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

[4] Calibre Design Solut, Mentor Graph, Fremont, CA 94538 USA

来源：

2016 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC) | 2016年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

CoolCube (TM) is a monolithic 3D technology which has the potential to solve the interconnection density limitation of the existing TSV-based 3D integration processes. Since the active devices are fabricated on extremely thin die substrates, heat dissipation has been pointed as a potential showstopper issue for this emerging technology. This work provides a comparative study of the thermal performance of the CoolCube and TSV-based 3D integration processes for a range of technology parameters and application scenarios. Results show that CoolCube exhibits thermal performance similar to or even better than the TSV-based technologies thanks to its very tight die-to-die thermal coupling.

引用

页数：4

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