Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

被引：4

作者：

Miucci, A. ^{[1
]}

Gonella, L. ^{[2
]}

Hemperek, T. ^{[2
]}

Huegging, F. ^{[2
]}

Krueger, H. ^{[2
]}

Obermann, T. ^{[2
]}

Wermes, N. ^{[2
]}

Garcia-Sciveres, M. ^{[3
]}

Backhaus, M. ^{[4
]}

Capeans, M. ^{[4
]}

Feigl, S. ^{[4
]}

Nessi, M. ^{[4
]}

Pernegger, H. ^{[4
]}

Ristic, B. ^{[4
]}

Gonzalez-Sevilla, S. ^{[1
]}

Ferrere, D. ^{[1
]}

Iacobucci, G. ^{[1
]}

La Rosa, A. ^{[1
]}

Muenstermann, D. ^{[1
]}

George, M. ^{[5
]}

Grosse-Knetter, J. ^{[5
]}

Quadt, A. ^{[5
]}

Rieger, J. ^{[5
]}

Weingarten, J. ^{[5
]}

Bates, R. ^{[6
]}

Blue, A. ^{[6
]}

Buttar, C. ^{[6
]}

Hynds, D. ^{[6
]}

Kreidl, C. ^{[7
]}

Peric, I. ^{[7
]}

Breugnon, P. ^{[8
]}

Pangaud, P. ^{[8
]}

Godiot-Basolo, S. ^{[8
]}

Fougeron, D. ^{[8
]}

Bompard, F. ^{[8
]}

Clemens, J. C. ^{[8
]}

Liu, J. ^{[8
]}

Barbero, M. ^{[8
]}

Rozanov, A. ^{[8
]}

机构：

[1] Univ Geneva, Geneva, Switzerland

[2] Univ Bonn, Inst Phys, Bonn, Germany

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[4] CERN, PH DT Dept, Geneva, Switzerland

[5] Univ Gottingen, Inst Phys, D-37073 Gottingen, Germany

[6] Univ Glasgow, Glasgow G12 8QQ, Lanark, Scotland

[7] Heidelberg Univ, Inst Comp Sci, D-68131 Mannheim, Germany

[8] Ctr Phys Particules Marseille, Marseille, France

来源：

JOURNAL OF INSTRUMENTATION | 2014年 / 9卷

关键词：

Particle tracking detectors; Particle tracking detectors (Solid-state detectors);

D O I：

10.1088/1748-0221/9/05/C05064

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown.

引用

页数：8

共 32 条

[21] Development of Radiation-hard Silicon-based Pixel Sensors for the ATLAS Upgrade
Fadeyev, V.
[J]. 2010 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD (NSS/MIC), 2010, : 1025 - 1029
[22] 65-nm CMOS Front-End Channel for Pixel Readout in the HL-LHC Radiation Environment
Ratti, Lodovico
Gaioni, Luigi
Manghisoni, Massimo
Re, Valerio
Riceputi, Elisa
Traversi, Gianluca
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (12) : 2922 - 2932
[23] A prototype of pixel readout ASIC in 65nm CMOS technology for extreme hit rate detectors at HL-LHC
Paterno, A.
Pacher, L.
Monteil, E.
Loddo, F.
Demaria, N.
Gaioni, L.
De Canio, F.
Traversi, G.
Re, V.
Ratti, L.
Rivetti, A.
Rolo, M. Da Rocha
Dellacasa, G.
Mazza, G.
Marzocca, C.
Licciulli, F.
Ciciriello, F.
Marconi, S.
Placidi, P.
Magazzu, G.
Stabile, A.
Mattiazzo, S.
Veri, C.
[J]. JOURNAL OF INSTRUMENTATION, 2017, 12
[24] TCAD simulation of radiation hard n-MCz and n-Fz Si microstrip detector for the HL-LHC
Kaur, B.
Patyal, S.
Saini, N.
Chatterjee, P.
Srivastava, A. K.
[J]. JOURNAL OF INSTRUMENTATION, 2022, 17 (10):
[25] Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC
Macchiolo, A.
Andricek, L.
Ellenburg, M.
Moser, H. G.
Nisius, R.
Richter, R. H.
Terzo, S.
Weigell, P.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2013, 731 : 210 - 215
[26] Depleted fully monolithic active CMOS pixel sensors (DMAPS) in high resistivity 150 nm technology for LHC
Hirono, Toko
Barbero, Marlon
Barrillon, Pierre
Bhat, Siddharth
Breugnon, Patrick
Caicedo, Ivan
Chen, Zongde
Daas, Michael
Degerli, Yavuz
Godiot, Stphanie
Guilloux, Fabrice
Hemperek, Tomasz
Huegging, Fabian
Krueger, Hans
Pangaud, Patrick
Rymaszewski, Piotr
Schwemling, Philippe
Vandenbroucke, Maxence
Wang, Tianyang
Wermes, Norbert
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 924 : 87 - 91
[27] First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors
Pernegger, H.
Bates, R.
Buttar, C.
Dalla, M.
van Hoorne, J. W.
Kugathasan, T.
Maneuski, D.
Musa, L.
Riedler, P.
Riegel, C.
Sbarra, C.
Schaefer, D.
Schioppa, E. J.
Snoeys, W.
[J]. JOURNAL OF INSTRUMENTATION, 2017, 12
[28] Mini-MALTA: radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Dyndal, M.
Dao, V
Allport, P.
Tortajada, I. Asensi
Barbero, M.
Bhat, S.
Bortoletto, D.
Berdalovic, I
Bespin, C.
Buttar, C.
Caicedo, I
Cardella, R.
Dachs, F.
Degerli, Y.
Denizli, H.
de Acedo, L. Flores Sanz
Freeman, P.
Gonella, L.
Habib, A.
Hemperek, T.
Hirono, T.
Hiti, B.
Kugathasan, T.
Mandic, I
Maneuski, D.
Mikuz, M.
Moustakas, K.
Munker, M.
Oyulmaz, K. Y.
Pangaud, P.
Pernegger, H.
Piro, F.
Riedler, P.
Sandaker, H.
Schioppa, E. J.
Schwemling, P.
Sharma, A.
Argemi, L. Simon
Sanchez, C. Solans
Snoeys, W.
Suligoj, T.
Wang, T.
Wermes, N.
Worm, S.
[J]. JOURNAL OF INSTRUMENTATION, 2020, 15 (02):
[29] The Dexela 2923 CMOS X-ray detector: A flat panel detector based on CMOS active pixel sensors for medical imaging applications
Konstantinidis, Anastasios C.
Szafraniec, Magdalena B.
Speller, Robert D.
Olivo, Alessandro
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2012, 689 : 12 - 21
[30] TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology
Tuan A. Bui
Geoffrey K. Reeves
Patrick W. Leech
Anthony W. Holland
Geoffrey Taylor
[J]. MRS Advances, 2018, 3 (51) : 3053 - 3059

← 1 2 3 4 →