Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

被引：4

作者：

Miucci, A. ^{[1
]}

Gonella, L. ^{[2
]}

Hemperek, T. ^{[2
]}

Huegging, F. ^{[2
]}

Krueger, H. ^{[2
]}

Obermann, T. ^{[2
]}

Wermes, N. ^{[2
]}

Garcia-Sciveres, M. ^{[3
]}

Backhaus, M. ^{[4
]}

Capeans, M. ^{[4
]}

Feigl, S. ^{[4
]}

Nessi, M. ^{[4
]}

Pernegger, H. ^{[4
]}

Ristic, B. ^{[4
]}

Gonzalez-Sevilla, S. ^{[1
]}

Ferrere, D. ^{[1
]}

Iacobucci, G. ^{[1
]}

La Rosa, A. ^{[1
]}

Muenstermann, D. ^{[1
]}

George, M. ^{[5
]}

Grosse-Knetter, J. ^{[5
]}

Quadt, A. ^{[5
]}

Rieger, J. ^{[5
]}

Weingarten, J. ^{[5
]}

Bates, R. ^{[6
]}

Blue, A. ^{[6
]}

Buttar, C. ^{[6
]}

Hynds, D. ^{[6
]}

Kreidl, C. ^{[7
]}

Peric, I. ^{[7
]}

Breugnon, P. ^{[8
]}

Pangaud, P. ^{[8
]}

Godiot-Basolo, S. ^{[8
]}

Fougeron, D. ^{[8
]}

Bompard, F. ^{[8
]}

Clemens, J. C. ^{[8
]}

Liu, J. ^{[8
]}

Barbero, M. ^{[8
]}

Rozanov, A. ^{[8
]}

机构：

[1] Univ Geneva, Geneva, Switzerland

[2] Univ Bonn, Inst Phys, Bonn, Germany

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[4] CERN, PH DT Dept, Geneva, Switzerland

[5] Univ Gottingen, Inst Phys, D-37073 Gottingen, Germany

[6] Univ Glasgow, Glasgow G12 8QQ, Lanark, Scotland

[7] Heidelberg Univ, Inst Comp Sci, D-68131 Mannheim, Germany

[8] Ctr Phys Particules Marseille, Marseille, France

来源：

JOURNAL OF INSTRUMENTATION | 2014年 / 9卷

关键词：

Particle tracking detectors; Particle tracking detectors (Solid-state detectors);

D O I：

10.1088/1748-0221/9/05/C05064

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown.

引用

页数：8

共 32 条

[31] TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology
Bui, Tuan A.
Reeves, Geoffrey K.
Leech, Patrick W.
Holland, Anthony S.
Taylor, Geoffrey
[J]. MRS ADVANCES, 2018, 3 (51): : 3053 - 3059
[32] A Low-Power Low-Noise Synchronous Pixel Front-End Chain in 65 nm CMOS Technology with Local Fast ToT Encoding and Autozeroing for Extreme Rate and Radiation at HL-LHC
Pacher, Luca
Monteil, Ennio
Rivetti, Angelo
Demaria, Natale
Rolo, Manuel Da Rocha
[J]. 2015 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2015,

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