Copper metallization reliability

被引：149
|
作者：
Lloyd, JR
Clemens, J
Snede, R
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA
[2] Aetrium Inc, St Paul, MN USA
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 11期
关键词：
D O I：
10.1016/S0026-2714(99)00177-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electromigration performance of Cu metalization has been reviewed with an explanation as to why the advantage of Cu over Al alloys in the fine line regime is not as great as anticipated. Cu metalization testing procedures are described and the dangers of "overstressing" are explained in some detail. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1595 / 1602
页数：8
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