Copper metallization reliability

被引：149
|
作者：
Lloyd, JR
Clemens, J
Snede, R
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA
[2] Aetrium Inc, St Paul, MN USA
来源：
MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 11期
关键词：
D O I：
10.1016/S0026-2714(99)00177-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electromigration performance of Cu metalization has been reviewed with an explanation as to why the advantage of Cu over Al alloys in the fine line regime is not as great as anticipated. Cu metalization testing procedures are described and the dangers of "overstressing" are explained in some detail. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1595 / 1602
页数：8
相关论文
共 50 条
  • [21] Holistic Reliability: Accelerated Testing of Metallization
    Terry, Mason L.
    Heta, Yushi
    Ozawa, Kazutaka
    Dang, Thomas
    Alcantara, Christopher
    Dee, Jeffery
    Antoniadis, Homer
    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 925 - 928
  • [22] Reliability of dual Damascene Cu metallization
    Tsai, MH
    Tsai, WJ
    Shue, SL
    Yu, CH
    Liang, MS
    PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, : 214 - 216
  • [23] Correlating Reliability to Yield for Liftoff Metallization
    Roesch, William J.
    Hamada, Dorothy June M.
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [24] Thermal cycle reliability of stacked via structures with copper metallization and an organic low-K dielectric
    Filippi, RG
    McGrath, JF
    Shaw, TM
    Murray, CE
    Rathore, HS
    McLaughlin, PS
    McGahay, V
    Nicholson, L
    Wang, PC
    Lloyd, JR
    Lane, M
    Rosenberg, R
    Liu, X
    Wang, YY
    Landers, W
    Spooner, T
    Demarest, JJ
    Engel, BH
    Gill, J
    Goth, G
    Barth, E
    Biery, G
    Davis, CR
    Wachnik, RA
    Goldblatt, R
    Ivers, T
    Swinton, A
    Barile, C
    Aitken, J
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 61 - 67
  • [25] ALLOYING OF COPPER FOR USE IN MICROELECTRONIC METALLIZATION
    LANFORD, WA
    DING, PJ
    WANG, W
    HYMES, S
    MURARKA, SP
    MATERIALS CHEMISTRY AND PHYSICS, 1995, 41 (03) : 192 - 198
  • [26] The evolution of diffusion barriers in copper metallization
    Lee, Chiapyng
    Kuo, Yu-Lin
    JOM, 2007, 59 (01) : 44 - 49
  • [27] Copper metallization - Damascene process.
    不详
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 217 : U214 - U214
  • [28] TiN diffusion barriers for copper metallization
    Baumann, J
    Werner, T
    Ehrlich, A
    Rennau, M
    Kaufmann, C
    Gessner, T
    MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 221 - 228
  • [29] CMP of copper for multilevel metallization of ULSI
    Liu, Yuling
    Wang, Hongying
    Wang, Xin
    Tan, Baimei
    Dianzi Qijian/Journal of Electron Devices, 2001, 24 (02):
  • [30] SYNTHESIS OF POLYPYRROLE AND ITS METALLIZATION BY COPPER
    CHEN, SK
    WANG, YY
    WAN, CC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 27 (2-3): : 103 - 108
12345