Reliability aspects of copper metallization and interconnect technology for power devices

被引：10

作者：

Hille, Frank ^{[1
]}

Roth, Roman ^{[2
]}

Schaeffer, Carsten ^{[2
]}

Schulze, Holger ^{[2
]}

Heuck, Nicolas ^{[3
]}

Bolowski, Daniel ^{[3
]}

Guth, Karsten ^{[3
]}

Ciliox, Alexander ^{[3
]}

Rott, Karma ^{[1
]}

Umbach, Frank ^{[1
]}

Kerber, Martin ^{[1
,4
]}

机构：

[1] Infineon Technol AG, Campeon 1-12, D-85579 Neubiberg, Germany

[2] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria

[3] Infineon Technol AG, Max Planck Str 5, D-59581 Warstein, Germany

[4] Schnann 65, A-6574 Pettneu Am Arlberg, Austria

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 64卷

关键词：

IGBT; Robustness validation; Temperature stability; Copper-silicide; Diffusion barrier; Wire bonding; Die attach; CU-SI;

D O I：

10.1016/j.microrel.2016.07.119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The introduction of thick copper metallization and topside interconnects as well as a superior die attach technology is improving the performance and reliability of IGBT power transistor technologies significantly. The much higher specific heat capacity and higher thermal conductivity increases the short circuit capability of IGBTs, which is especially important for inverters for drives applications. This opens the potential to further optimize the electrical performance of IGBTs for higher energy efficiency. The change in metallization requires the introduction of a reliable barrier against copper diffusion and copper silicide formation. This requires the development of an efficient test method and reliability assessment according to a robustness validation approach. In addition, the new metallization enables interconnects with copper bond wires, which yield, together with an improved die attach technology, a major improvement in the power cycling capability. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：393 / 402

页数：10

共 50 条

[1] Copper metallization for power devices
Robl, W.
Mezl, M.
Weidgans, B.
Hofmann, R.
Stecher, M.
2007 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, 2007, : 192 - +
[2] Copper metallization influence on power MOS reliability
Feybesse, A
Deram, I
Reynes, JM
Moreau, E
MICROELECTRONICS RELIABILITY, 2003, 43 (04) : 571 - 576
[3] Last metal copper metallization for power devices
Robl, Wemer
Melzl, Michael
Weidgans, Berngard
Hofmann, Renate
Stecher, Matthias
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2008, 21 (03) : 358 - 362
[4] Future interconnect technologies and copper metallization
Lin, XW
Pramanik, D
SOLID STATE TECHNOLOGY, 1998, 41 (10) : 63 - +
[5] Copper metallization reliability
Lloyd, JR
Clemens, J
Snede, R
MICROELECTRONICS RELIABILITY, 1999, 39 (11) : 1595 - 1602
[6] Power Cu Metallization for Future Power Devices - Process Integration Concept and Reliability
Roth, R.
Schulze, H.
Schaeffer, C.
Hille, F.
Umbach, F.
Mertens, G.
Rohn, N.
Bolowski, D.
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 195 - 198
[7] Integration of thin electroless copper films in copper interconnect metallization
Webb, E
Witt, C
Andryuschenko, T
Reid, J
JOURNAL OF APPLIED ELECTROCHEMISTRY, 2004, 34 (03) : 291 - 300
[8] Copper metallization of Teflon AF1600, using evaporation and sputtering, for multilevel interconnect devices
Dept. de Génie Physique, Groupe des Couches Minces, Ecl. Polytech. de Montréal, Succursale Centre-Ville, Montréal, Que. H3C 3A7, Canada
Microelectron Eng, 1-4 (217-221):
[9] Integration of thin electroless copper films in copper interconnect metallization
Webb, E. (eric.webb@novellus.com), 1600, Kluwer Academic Publishers (34):
[10] Copper metallization of Teflon AF1600, using evaporation and sputtering, for multilevel interconnect devices
Popovici, D
KlembergSapieha, JE
Czeremuszkin, G
Sacher, E
Meunier, M
Martinu, L
MICROELECTRONIC ENGINEERING, 1997, 33 (1-4) : 217 - 221

← 1 2 3 4 5 →