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Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates
被引:3
|作者:
Cheng, Jung-An
[1
]
Chuang, Chiao-Shun
Chang, Ming-Nung
Tsai, Yun-Chu
Shieh, Han-Ping D.
机构:
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
关键词:
buffer layers;
grain size;
high-k dielectric thin films;
hole traps;
organic field effect transistors;
organic semiconductors;
polymer films;
thin film transistors;
MOLECULAR-ORIENTATION;
GATE-DIELECTRICS;
GROWTH;
GOLD;
D O I:
10.1063/1.3075873
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We reported on organic thin-film transistors (OTFTs) with high dielectric constant polymer, poly(2,2,2-trifluoroethyl methacrylate) (PTFMA), as the gate dielectric. In top-contact OTFTs, the field-effect mobility was enhanced by applying a dielectric buffer layer poly(alpha-methylstyrene) to the bare PTFMA. After improving interfacial affinity within the active layer/dielectrics, deposited pentacene grain size and device performance were enhanced dramatically. The corresponding mobility, threshold voltage, and on/off current ratio were 0.70 cm(2) V(-1) s(-1), -10.5 V, and 5.4x10(5), respectively. The moderately improved interface also suppressed the hole-trapping effect, which led to less hysteresis and minimized threshold voltage shift.
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页数:4
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