Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates

被引:3
|
作者
Cheng, Jung-An [1 ]
Chuang, Chiao-Shun
Chang, Ming-Nung
Tsai, Yun-Chu
Shieh, Han-Ping D.
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
关键词
buffer layers; grain size; high-k dielectric thin films; hole traps; organic field effect transistors; organic semiconductors; polymer films; thin film transistors; MOLECULAR-ORIENTATION; GATE-DIELECTRICS; GROWTH; GOLD;
D O I
10.1063/1.3075873
中图分类号
O59 [应用物理学];
学科分类号
摘要
We reported on organic thin-film transistors (OTFTs) with high dielectric constant polymer, poly(2,2,2-trifluoroethyl methacrylate) (PTFMA), as the gate dielectric. In top-contact OTFTs, the field-effect mobility was enhanced by applying a dielectric buffer layer poly(alpha-methylstyrene) to the bare PTFMA. After improving interfacial affinity within the active layer/dielectrics, deposited pentacene grain size and device performance were enhanced dramatically. The corresponding mobility, threshold voltage, and on/off current ratio were 0.70 cm(2) V(-1) s(-1), -10.5 V, and 5.4x10(5), respectively. The moderately improved interface also suppressed the hole-trapping effect, which led to less hysteresis and minimized threshold voltage shift.
引用
收藏
页数:4
相关论文
共 50 条
  • [41] Solution-processed n-type organic thin-film transistors with high field-effect mobility
    Chikamatsu, M
    Nagamatsu, S
    Yoshida, Y
    Saito, K
    Yase, K
    Kikuchi, K
    APPLIED PHYSICS LETTERS, 2005, 87 (20) : 1 - 3
  • [42] Electrical Characterization of Pentacene-Based Organic Thin-Film Transistors
    Park, Dongkyu
    Heo, Jinhee
    Kwon, Jungmin
    Chung, Ilsub
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (02) : 687 - 691
  • [43] Fringe Field Effect on Electrical Characteristics of Pentacene Thin-Film Transistors
    Park, Jaehoon
    Zhang, Xue
    Bae, Moo-Ho
    Park, Gyeong-Tae
    Bae, Jin-Hyuk
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
  • [44] AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH VERY HIGH FIELD-EFFECT MOBILITY
    LIN, JL
    SAH, WJ
    LEE, SC
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (03) : 120 - 121
  • [45] Device Simulation of Pentacene Based Organic Field-Effect Transistors
    Qiu, H.
    Wilke, B.
    Goebel, H.
    2008 IEEE CONFERENCE ON POLYMERS AND ADHESIVES IN MICROELECTRONICS AND PHOTONICS AND 2008 IEEE INTERDISCIPLINARY CONFERENCE ON PORTABLE INFORMATION DEVICES, 2008, : 177 - 180
  • [46] The effect of gate dielectric deposition at different vacuum conditions on the field-effect mobility of pentacene based organic field-effect transistors
    Biring, Sajal
    Li, Ya-Ze
    Lee, Chih-Chien
    Pan, Arvind
    Li, Yan-De
    Kumar, Gautham
    Liu, Shun-Wei
    THIN SOLID FILMS, 2017, 636 : 485 - 489
  • [48] Morphological origin of high mobility in pentacene thin-film transistors
    Laquindanum, JG
    Katz, HE
    Lovinger, AJ
    Dodabalapur, A
    CHEMISTRY OF MATERIALS, 1996, 8 (11) : 2542 - &
  • [49] Enhanced field-effect mobility of organic thin film transistors by surface-mediated molecular ordering.
    Cho, K
    Kim, DH
    Park, YD
    Jang, Y
    Yang, H
    Kim, YH
    Moon, DG
    Park, S
    Chang, T
    Ryu, CY
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 229 : U1156 - U1156
  • [50] Top Contact Pentacene Organic Thin Film Field Effect Transistors
    ZHANG Su-mei~1
    2. Changchun Institute of Appl. Chem.
    Semiconductor Photonics and Technology, 2004, (04) : 265 - 267