Photochemical control of the carrier mobility in pentacene-based organic thin-film transistors

被引：16

作者：

Marchl, Marco ^{[1
]}

Golubkov, Andrej W. ^{[1
]}

Edler, Matthias ^{[2
]}

Griesser, Thomas ^{[2
]}

Pacher, Peter ^{[1
]}

Haase, Anja ^{[3
]}

Stadlober, Barbara ^{[3
]}

Belegratis, Maria R. ^{[3
]}

Trimmel, Gregor ^{[4
]}

Zojer, Egbert ^{[1
]}

机构：

[1] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

[2] Univ Min & Met Leoben, Inst Chem Polymer Mat, A-8700 Leoben, Austria

[3] Inst Nanostruct Mat & Photon, A-8160 Weiz, Austria

[4] Graz Univ Technol, Inst Chem & Technol Mat, A-8010 Graz, Austria

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 21期

基金：

奥地利科学基金会;

关键词：

MORPHOLOGY; PERFORMANCE; ROUGHNESS; ENERGY; LAYER;

D O I：

10.1063/1.3432672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use a photoreactive interfacial layer of poly(endo,exo-bis(2-nitrobenzyl) bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylate) (PBHND) between the gate dielectric and the pentacene active layer to tune the effective hole mobility in organic thin film transistors over approximately one order of magnitude. This can be explained by the photoconversion of the PBHND layer changing its surface energy and thus strongly impacting pentacene growth. A linear relationship between the mobility and the grain size is observed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3432672]

引用

页数：3

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