Current-voltage characteristics of an integrated Schottky diode

被引：10
|
作者：
Tarplee, M [1 ]
Madangarli, V [1 ]
Sudarshan, TS [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 05期
关键词：
SiC devices; Schottky diodes; current spreading; leakage current;
D O I：
10.1016/S0038-1101(01)00189-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is possible to reduce the reversed leakage current of a Schottky diode relative to its forward Current through careful design of the Schottky electrode. This paper examines the J V characteristics of a Schottky diode that employs a compound Schottky electrode. The compound electrode design presented in this paper increases the reverse breakdown voltage and reduces file reverse leakage Current. (C) 2002 Elsevier Science Ltd. All rights reserved.
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页码：753 / 757
页数：5
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