ON THE CURRENT-VOLTAGE CHARACTERISTICS OF AMORPHOUS HYDROGENATED SILICON SCHOTTKY DIODES.

被引：0
|
作者：
Chen, Inan [1 ]
Lee, Sanboh [1 ]
机构：
[1] Xerox Webster Research Center, Webster, NY 14580, United States
来源：
Journal of Applied Physics | 1982年 / 53卷 / 02期
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页码：1045 / 1051
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