Current-voltage characteristics of an integrated Schottky diode

被引：10
|
作者：
Tarplee, M [1 ]
Madangarli, V [1 ]
Sudarshan, TS [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 05期
关键词：
SiC devices; Schottky diodes; current spreading; leakage current;
D O I：
10.1016/S0038-1101(01)00189-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is possible to reduce the reversed leakage current of a Schottky diode relative to its forward Current through careful design of the Schottky electrode. This paper examines the J V characteristics of a Schottky diode that employs a compound Schottky electrode. The compound electrode design presented in this paper increases the reverse breakdown voltage and reduces file reverse leakage Current. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：753 / 757
页数：5
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