On the Progressive Performance of a 700-V Triple RESURF LDMOS Based on Substrate Termination Technology

被引：0
|
作者：
Qiao, Ming [1 ]
Yu, Liang-Liang [1 ]
Wang, Hui-Hui [2 ]
Jin, Feng [2 ]
Li, Zhao-Ji [1 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Sichuan, Peoples R China
[2] Shanghai Huahong Grace Semicond Mfg Corp, Shanghai, Peoples R China
来源：
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年
基金：
中国国家自然科学基金;
关键词：
DMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a novel triple reduced surface field (RESURF) LDMOS with N-top layer based on substrate termination technology (STT) is proposed. The analytical models of surface potential, surface electric field, breakdown voltage (BV) and optimal integrated charge of N-top layer (Q(ntop)) for the novel triple RESURF LDMOS are achieved. Furthermore, STT is applied to avoid the premature avalanche breakdown occurring in the curved source region with small curvature radius for the interdigitated layout. Two key parameters of L and L-P are optimized. With optimization for the termination region, the LDMOS demonstrates a progressive performance with lowest specific on-resistance (R-on,R-sp) for the 700-V LDMOS in comparison to the other latest existing technologies.
引用
收藏
页码：385 / 388
页数：4
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