Vibrational properties of a-Si:H films containing voids:: Experiment and modeling

被引：0
|
作者：
Barriquand, N [1 ]
Paillard, V [1 ]
Cabarrocas, PRI [1 ]
Landa, G [1 ]
Djafari-Rouhani, M [1 ]
机构：
[1] Univ Toulouse 3, Lab Phys Solides, ESA5477 CNRS, F-31062 Toulouse 4, France
来源：
AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷
关键词：
D O I：
10.1557/PROC-557-451
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present results about the vibrational properties of hydrogenated amorphous silicon films. We expect to explain the slight differences observed in the Raman spectra using atomic-scale modeling. In particular, we focuse on the correlation of our results to the density of samples. This should give quantitative structural information which could be correlated to both macroscopic properties and elaboration conditions.
引用
收藏
页码：451 / 455
页数：5
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