Photoconductivity of thin a-Si:H films

被引：0
|
作者：
Kazanskii, A. G. [1 ]
Koshelev, O. G. [1 ]
Sazonov, A. Yu. [2 ]
Khomich, A. A. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119992, Russia
[2] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 02期
关键词：
D O I：
10.1007/s11453-008-2012-y
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Photoelectric and optical properties of a-Si:H films with a thickness of 60-100 nm were studied. Temperature dependences of photoconductivity in the temperature range 130-440 K and spectral dependences of the absorption coefficient near the absorption edge were measured. The results of comparative measurements of the room-temperature conductivity and the absorption coefficient in the defect-related subgap spectral range (photon energy h nu = 1.2 eV) indicate that the recombination of nonequilibrium carriers and, accordingly, the photoconductivity of a-Si:H films with a thickness of similar to 100 nm are determined by the defect concentration in the films.
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页码：192 / 194
页数：3
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