Photoconductivity of thin a-Si:H films

被引：0

作者：

Kazanskii, A. G. ^{[1
]}

Koshelev, O. G. ^{[1
]}

Sazonov, A. Yu. ^{[2
]}

Khomich, A. A. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Moscow 119992, Russia

[2] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 02期

关键词：

D O I：

10.1007/s11453-008-2012-y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoelectric and optical properties of a-Si:H films with a thickness of 60-100 nm were studied. Temperature dependences of photoconductivity in the temperature range 130-440 K and spectral dependences of the absorption coefficient near the absorption edge were measured. The results of comparative measurements of the room-temperature conductivity and the absorption coefficient in the defect-related subgap spectral range (photon energy h nu = 1.2 eV) indicate that the recombination of nonequilibrium carriers and, accordingly, the photoconductivity of a-Si:H films with a thickness of similar to 100 nm are determined by the defect concentration in the films.

引用

页码：192 / 194

页数：3

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