Investigation on Properties of Molybdenum Thin Films for CIGS Solar Cells

被引：3

作者：

Cho, Sang Hyun ^{[1
,2
]}

Kim, Hyo Jin ^{[2
,3
]}

Lee, Sung Ho ^{[2
]}

Woo, Jae Ik ^{[2
]}

Song, Kyu Ho ^{[2
]}

Song, Pung Keun ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea

[2] Nano Convergence Pract Applicat Ctr, Nano Convergence Res Team, Taegu 704801, South Korea

[3] Kyungpook Natl Univ, Dept Polymer Sci, Taegu 702701, South Korea

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2014年 / 9卷 / 02期

关键词：

Mo (Molybdenum) Back Contact; CIGS; (Cu; (In; Ga) Se-2) Solar Cell; Post-Annealing; In-Situ High Temperature XRD (HT-XRD); Magnetron Sputtering; DOPED-INDIUM-OXIDE; BACK CONTACT; FABRICATION;

D O I：

10.1166/jno.2014.1560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molybdenum (Mo) thin films are used widely as the back contact for CIGS-based solar cells. In this study, the properties of Mo films deposited by DC and RF magnetron sputtering were investigated for their effects on the structural properties of the subsequently sputtered CIGS absorber layer. Mo films were deposited on soda lime glass by DC and RF magnetron sputtering at sputtering powers ranging from 100 to 500 W. The optical, electrical and structural properties of the films were then characterized. The films deposited by RF magnetron sputtering were more reflective, conducting and crystalline than those obtained by DC magnetron sputtering. On the other hand, CIGS/Mo/SLG substrates showed different behaviors with respect to the crystallinity and growth of the CIGS absorber layer. A significant difference in the structural properties was observed after post-annealing with much better performance obtained with Mo films deposited by DC magnetron sputtering.

引用

页码：167 / 172

页数：6

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