CIGS THIN FILM SOLAR CELLS ON POLYIMIDE FOILS

被引：10
|
作者：
Nakada, Tokio [1 ]
Kuraishi, Taku [1 ]
Inoue, Taku [1 ]
Mise, Takahiro [1 ]
机构：
[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Kanagawa 2298558, Japan
来源：
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
关键词：
D O I：
10.1109/PVSC.2010.5615947
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The influence of Ga content and substrate temperature on the device performance of CIGS thin film solar cells fabricated on polyimide foils has been investigated. It was found that the precise control of substrate temperature and Ga content in CIGS are important issues to achieve high-efficiency CIGS devices since these strongly affect the formation of double-graded bandgap structure. A desirable double-grading of Ga/(In+Ga) atomic ratio was formed with Ga/(In+Ga) = 0.27 at a substrate temperature of 480 degrees C. By optimizing fabrication conditions a best flexible CIGS solar cell yielded a total-area efficiency of 15.7% with V-oc=0.605 V, J(sc)=35.1 mA/cm(2), and FF=0.741.
引用
收藏
页码：330 / 334
页数：5
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