Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy

被引：11

作者：

Ohtani, K. ^{[1
]}

Belmoubarik, M. ^{[1
]}

Ohno, H. ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

基金：

日本学术振兴会;

关键词：

Molecular Beam Epitaxy; Quantum well; Oxides; Semiconducting II-VI materials; Heterojunction semiconductor devices; DEVICES;

D O I：

10.1016/j.jcrysgro.2008.09.134

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy are investigated by a photocurrent spectroscopy. ZnO/MgZnO multiple quantum well (MQW) Structures containing different ZnO well thicknesses are prepared. Photocurrent peaks are observed when the polarization of incident light is TM mode, following the intersubband selection rule. On reducing the ZnO well thickness, photocurrent peaks shifted to higher energies. Calculation indicates that the photocurrent peaks are due to intersubband transitions from the first to the third subband in ZnO/MgZnO MQWs. Comparison between experiment and calculation allows LIS to estimate the band offset ratio. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：2176 / 2178

页数：3

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