Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy

被引：11
|
作者：
Ohtani, K. [1 ]
Belmoubarik, M. [1 ]
Ohno, H. [1 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期
基金：
日本学术振兴会;
关键词：
Molecular Beam Epitaxy; Quantum well; Oxides; Semiconducting II-VI materials; Heterojunction semiconductor devices; DEVICES;
D O I：
10.1016/j.jcrysgro.2008.09.134
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy are investigated by a photocurrent spectroscopy. ZnO/MgZnO multiple quantum well (MQW) Structures containing different ZnO well thicknesses are prepared. Photocurrent peaks are observed when the polarization of incident light is TM mode, following the intersubband selection rule. On reducing the ZnO well thickness, photocurrent peaks shifted to higher energies. Calculation indicates that the photocurrent peaks are due to intersubband transitions from the first to the third subband in ZnO/MgZnO MQWs. Comparison between experiment and calculation allows LIS to estimate the band offset ratio. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2176 / 2178
页数：3
相关论文
共 50 条
  • [31] Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy
    [J]. Waltereit, P, 1600, American Institute of Physics Inc. (92):
  • [32] Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy
    Waltereit, P
    Craven, MD
    DenBaars, SP
    Speck, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 456 - 460
  • [33] Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
    Li, LH
    Pan, Z
    Zhang, W
    Lin, YW
    Wang, XY
    Wu, RH
    Ge, WK
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 140 - 144
  • [34] Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy
    Chen, Cheng-Yu
    Yang, Cheng-Yu
    Chyi, Jen-Inn
    Wu, Chih-Hung
    [J]. JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 180 - 183
  • [35] A Intersubband transitions in novel strained coupled quantum wells based on In0.53Ga0.47As grown by molecular beam epitaxy
    Nagase, M.
    Mozume, T.
    Simoyama, T.
    Hasama, T.
    Ishikawa, H.
    [J]. 2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS, 2006, : 365 - +
  • [36] Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy
    Adolph, David
    Zamani, Reza R.
    Dick, Kimberly A.
    Ive, Tommy
    [J]. APL MATERIALS, 2016, 4 (08):
  • [37] High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy
    Miyamoto, K
    Sano, M
    Kato, H
    Yao, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 265 (1-2) : 34 - 40
  • [38] Optical properties and crystallinity of ZnO thin films grown on porous silicon by using plasma-assisted molecular beam epitaxy
    Min Su Kim
    Jae-Young Leem
    Do Yeob Kim
    Sung-O Kim
    [J]. Journal of the Korean Physical Society, 2012, 60 : 1949 - 1952
  • [39] Optical Properties and Crystallinity of ZnO Thin Films Grown on Porous Silicon by Using Plasma-assisted Molecular Beam Epitaxy
    Kim, Min Su
    Leem, Jae-Young
    Kim, Do Yeob
    Kim, Sung-O
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 60 (11) : 1949 - 1952
  • [40] Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes
    Baranowski, Michal
    Kudrawiec, Robert
    Misiewicz, Jan
    Turski, Henryk
    Skierbiszewski, Czeslaw
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 983 - 988
12345