Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy

被引:0
|
作者
机构
[1] Waltereit, P.
[2] Craven, M.D.
[3] Denbaars, S.P.
[4] Speck, J.S.
来源
Waltereit, P | 1600年 / American Institute of Physics Inc.卷 / 92期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy
    Waltereit, P
    Craven, MD
    DenBaars, SP
    Speck, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 456 - 460
  • [2] Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy
    Brandt, O
    Waltereit, P
    Dhar, S
    Jahn, U
    Sun, YJ
    Trampert, A
    Ploog, KH
    Taglient, MA
    Tapfer, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1626 - 1639
  • [3] Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy
    Brandt, O
    Sun, YJ
    Schönherr, HP
    Ploog, KH
    Waltereit, P
    Lim, SH
    Speck, JS
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (01) : 90 - 92
  • [4] Impact of In content on the structural and optical properties of (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy
    Waltereit, P
    Speck, JS
    [J]. GAN AND RELATED ALLOYS-2001, 2002, 693 : 3 - +
  • [5] Electrostatic fields and compositional fluctuations in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy
    Waltereit, P
    Brandt, O
    Ringling, J
    Ploog, KH
    [J]. PHYSICAL REVIEW B, 2001, 64 (24) : 2453051 - 2453056
  • [6] In surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy
    Waltereit, P
    Brandt, O
    Ploog, KH
    Tagliente, MA
    Tapfer, L
    [J]. PHYSICAL REVIEW B, 2002, 66 (16) : 1 - 6
  • [7] Indium surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy
    Waltereit, P
    Brandt, O
    Ploog, KH
    Tagliente, MA
    Tapfer, L
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 228 (01): : 49 - 53
  • [8] High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy
    Shen, XQ
    Ide, T
    Shimizu, M
    Okumura, H
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5731 - 5733
  • [9] Growth and characterization of InGaN/GaN multiple quantum wells on Ga-polarity GaN by plasma-assisted molecular beam epitaxy
    Shen, XQ
    Ide, T
    Shimizu, M
    Sasaki, F
    Okumura, H
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (01): : 99 - 102
  • [10] Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on γ-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxy
    Waltereit, P
    Brandt, O
    Ploog, KH
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2029 - 2031