A Intersubband transitions in novel strained coupled quantum wells based on In0.53Ga0.47As grown by molecular beam epitaxy

被引：0
|
作者：
Nagase, M. [1 ]
Mozume, T. [1 ]
Simoyama, T. [2 ]
Hasama, T. [1 ]
Ishikawa, H. [1 ]
机构：
[1] AIST, Ultrafast Photon Devices Lab, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/AlAs/AlAsSb coupled double quantum wells (CDQWs) have been improved for use in intersubband transition switches. The In content of the well layers was reduced in order to investigate the two-photon absorption in our switches. The crystal quality for In content of 0.53 was deteriorated when compared with the case for In composition of 0.8 due to uncompensated strain by AlAs layers. A new strain-compensation for InGaAs/AlAs/AlAsSb CDQWs was achieved by adjusting the Sb composition of the barrier layers.
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页码：365 / +
页数：2
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