Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces

被引：7
|
作者：
Lucovsky, G
Yang, H
Jing, Z
Whitten, JL
机构：
[1] N CAROLINA STATE UNIV,DEPT CHEM,RALEIGH,NC 27695
[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[3] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
APPLIED SURFACE SCIENCE | 1997年 / 117卷
基金：
美国国家科学基金会;
关键词：
Si-SiO2; interfaces; metastable defects; defect reactions; interface traps; fixed oxide charge;
D O I：
10.1016/S0169-4332(97)80077-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper discusses mechanisms for defect metastability with H atom participation at Si-SiO2 interfaces as in field effect transistors. Reaction pathways are associated with differences in defect bonding properties between positively charged (i) Si atoms and (ii) O and N atoms, Defect reaction equations, supported by quantum chemistry calculations. are presented. The metastable defects emphasized here are created by hole trapping followed by H atom attachment.
引用
收藏
页码：192 / 197
页数：6
相关论文
共 50 条
  • [41] THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES
    SAKURAI, T
    SUGANO, T
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2889 - 2896
  • [42] NEW PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES BY PHOTOCONDUCTIVE RESONANCE
    MENDZ, G
    HANEMAN, D
    SOLID STATE COMMUNICATIONS, 1980, 33 (06) : 657 - 661
  • [43] ELECTRONIC-STRUCTURE O MODEL SI-SIO2 INTERFACES
    HERMAN, F
    HENDERSON, DJ
    KASOWSKI, RV
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 304 - 304
  • [44] FORMATION OF SI-SIO2 INTERFACES AT LOW-TEMPERATURES USING MICROWAVE-EXCITED PLASMA
    YASUDA, Y
    ZAIMA, S
    KAIDA, T
    KOIDE, Y
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 429 - 432
  • [45] DEFECT STRUCTURE OF SI-SIO2 INTERFACE, A MODEL BASED ON TRIVALENT SILICON AND ITS HYDROGEN COMPOUNDS
    SVENSSON, CM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 457 - 457
  • [46] HYDROGEN INDUCED SURFACE STATES AT SI-SIO2 INTERFACE
    ZAININGER, KH
    WARFIELD, G
    PROCEEDINGS OF THE IEEE, 1964, 52 (08) : 972 - &
  • [47] Defect generation at the Si-SiO2 interface following corona charging
    Jin, Hao
    Weber, K. J.
    Dang, N. C.
    Jellett, W. E.
    APPLIED PHYSICS LETTERS, 2007, 90 (26)
  • [48] Effect of ultrasonic treatment on the defect structure of the Si-SiO2 system
    Kropman, D.
    Seeman, V.
    Dolgov, S.
    Medvids, A.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 10-12, 2016, 13 (10-12): : 793 - 797
  • [49] POSTIRRADIATION FORMATION OF SI-SIO2 INTERFACE STATES IN A HYDROGEN ATMOSPHERE AT ROOM-TEMPERATURE
    MRSTIK, BJ
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (08) : 627 - 633
  • [50] Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations
    Gosset, LG
    Ganem, JJ
    von Bardeleben, HJ
    Rigo, S
    Trimaille, I
    Cantin, JL
    Akermark, T
    Vickridge, IC
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3661 - 3665
12345