Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces

被引：7

作者：

Lucovsky, G

Yang, H

Jing, Z

Whitten, JL

机构：

[1] N CAROLINA STATE UNIV,DEPT CHEM,RALEIGH,NC 27695

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[3] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

基金：

美国国家科学基金会;

关键词：

Si-SiO2; interfaces; metastable defects; defect reactions; interface traps; fixed oxide charge;

D O I：

10.1016/S0169-4332(97)80077-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper discusses mechanisms for defect metastability with H atom participation at Si-SiO2 interfaces as in field effect transistors. Reaction pathways are associated with differences in defect bonding properties between positively charged (i) Si atoms and (ii) O and N atoms, Defect reaction equations, supported by quantum chemistry calculations. are presented. The metastable defects emphasized here are created by hole trapping followed by H atom attachment.

引用

页码：192 / 197

页数：6

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